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| UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium. Features http://onsemi.com 3 R1 2 R2 1 R2 Q1 R1 4 Q2 5 * * * * * Pb-Free Packages are Available Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel MARKING DIAGRAM 5 SC-88A/SOT-353 CASE 419A STYLE 6 1 4 Ux d 2 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc Ux = Device Marking x = 2, 3 or 5 d = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C (Note 1) RJA TJ, Tstg PD 833 -65 to +150 *150 C/W C mW Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (c) Semiconductor Components Industries, LLC, 2004 1 September, 2004 - Rev. 5 Publication Order Number: UMC2NT1/D UMC2NT1, UMC3NT1, UMC5NT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1 UMC3NT1 UMC5NT1 ICBO ICEO IEBO - - - - - - - - - - 100 500 0.2 0.5 1.0 nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 V(BR)CBO V(BR)CEO hFE 50 50 60 35 20 - - 4.9 15.4 7.0 3.3 0.8 0.8 0.38 - - 100 60 35 - - - 22 10 4.7 1.0 1.0 0.47 - - - - - 0.25 0.2 - 28.6 13 6.1 1.2 1.2 0.56 Vdc Vdc Vdc kW Vdc Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 UMC2NT1 UMC3NT1 UMC5NT1 VCE(SAT) VOL VOH R1 Resistor Ratio R1/R2 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1 UMC3NT1 UMC5NT1 ICBO ICEO IEBO - - - - - - - - - - 100 500 0.2 0.5 0.1 nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 V(BR)CBO V(BR)CEO hFE 50 50 60 35 80 - - 4.9 15.4 7.0 33 0.8 0.8 0.8 - - 100 60 140 - - - 22 10 47 1.0 1.0 1.0 - - - - - 0.25 0.2 - 28.6 13 61 1.2 1.2 1.2 Vdc Vdc Vdc kW Vdc Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 UMC2NT1 UMC3NT1 UMC5NT1 VCE(SAT) VOL VOH R1 Resistor Ratio R1/R2 http://onsemi.com 2 UMC2NT1, UMC3NT1, UMC5NT1 ORDERING INFORMATION Device UMC2NT1 UMC2NT1G UMC3NT1 UMC3NT1G UMC3NT2 UMC5NT1 UMC5NT2 UMC5NT2G Package SC-88A/SOT-353 SC-88A/SOT-353 (Pb-Free) SC-88A/SOT-353 SC-88A/SOT-353 (Pb-Free) SC-88A/SOT-353 SC-88A/SOT-353 SC-88A/SOT-353 SC-88A/SOT-353 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING AND RESISTOR VALUES Transistor 1 - PNP Device UMC2NT1 UMC3NT1 UMC3NT2 UMC5NT1 UMC5NT2 Marking U2 U3 U3 U5 U5 R1 (K) 22 10 10 4.7 4.7 R2 (K) 22 10 10 10 10 Transistor 2 - NPN R1 (K) 22 10 10 47 47 R2 (K) 22 10 10 47 47 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 3 UMC2NT1, UMC3NT1, UMC5NT1 TYPICAL ELECTRICAL CHARACTERISTICS -- UMC2NT1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 mA TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 UMC2NT1, UMC3NT1, UMC5NT1 TYPICAL ELECTRICAL CHARACTERISTICS -- UMC2NT1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN 25C 0.1 75C 1000 VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 mA TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 UMC2NT1, UMC3NT1, UMC5NT1 TYPICAL ELECTRICAL CHARACTERISTICS -- UMC3NT1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz lE = 0 mA TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 UMC2NT1, UMC3NT1, UMC5NT1 TYPICAL ELECTRICAL CHARACTERISTICS -- UMC3NT1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN 25C 75C 1000 VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 f = 1 MHz IE = 0 mA TA = 25C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://onsemi.com 7 UMC2NT1, UMC3NT1, UMC5NT1 TYPICAL ELECTRICAL CHARACTERISTICS -- UMC5NT1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 100 1000 VCE = 10 V TA = 75C -25C 25C TA = 75C 0.1 -25C 25C 10 0.01 0 10 20 30 40 50 60 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 12 10 Cob , CAPACITANCE (pF) 8 6 4 SERIES 1 2 0 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 f = 1 MHz IE = 0 mA TA = 25C 100 IC, COLLECTOR CURRENT (mA) 75C 10 1 VO = 5 V TA = -25C 25C 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 12 0.1 0.01 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage http://onsemi.com 8 UMC2NT1, UMC3NT1, UMC5NT1 TYPICAL ELECTRICAL CHARACTERISTICS -- UMC5NT1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 26. VCE(sat) versus IC Figure 27. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 100 75C 10 1 0.1 0.01 25C TA = -25C VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 28. Output Capacitance Figure 29. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 30. Input Voltage versus Output Current http://onsemi.com 9 UMC2NT1, UMC3NT1, UMC5NT1 PACKAGE DIMENSIONS SC-88A/SOT-353 CASE 419A-02 ISSUE G A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A-01 OBSOLETE. NEW STANDARD 419A-02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5 4 S 1 2 3 -B- DIM A B C D G H J K N S D 5 PL 0.2 (0.008) M B M N J C INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 6: PIN 1. 2. 3. 4. 5. EMITTER 2 BASE 2 EMITTER 1 COLLECTOR 1 BASE 1/COLLECTOR 2 H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 UMC2NT1/D |
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